STATISTICAL MODELING OF SILICON DIOXIDE RELIABILITY.

Jack Lee*, Ih Chin Chen, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

66 Scopus citations

Abstract

A technique is presented for predicting lifetime of an oxide to different voltages, different oxide areas and different temperatures. Using the defect density model in which defects are modeled as effective oxide thinning, many reliability parameters such as yield, failure rate, and screen time/screen yield can be predicted. Effects of oxide thickness, process improvements including defect gettering, and alternative dielectrics such as CVD oxides are evaluated in terms of defect density as a function of effective oxide thinning.

Original languageEnglish
Pages (from-to)131-138
Number of pages8
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - 1 Jan 1988

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