Statistical metrology of metal nanocrystal emories with 3-D finite-element analysis

Jonathan Shaw*, Tuo-Hung Hou, Hassan Raza, Edwin Chihchuan Kan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We study the parametrical yield of memory windows for the metal nanocrystal (NC) Flash memories with consideration of the 3-D electrostatics and channel percolation effects. Monte Carlo parametrical variation that accounts for the number and size fluctuations in NCs as well as channel length is used to determine the threshold voltage distribution and bit error rate for gate length scaling to 20 nm. Devices with nanowire-based channels are compared with planar devices having the same gate stack structure. Scalability prediction by 1-D analysis is found to be very different from 3-D modeling due to underestimation of effective NC coverage and failure to consider the 3-D nature of the channel percolation effect.

Original languageEnglish
Article number5164934
Pages (from-to)1729-1735
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume56
Issue number8
DOIs
StatePublished - Aug 2009

Keywords

  • 3-D electrostatics
  • Nanocrystal (NC)
  • Nonvolatile memories
  • Programming window distribution

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