Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-κ/metal gate MOSFETs in the presence of random discrete dopants and random interface traps

Yiming Li*, Hui Wen Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Fingerprint Dive into the research topics of 'Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-κ/metal gate MOSFETs in the presence of random discrete dopants and random interface traps'. Together they form a unique fingerprint.

Chemical Compounds

Physics & Astronomy

Engineering & Materials Science