Statistical device simulation of intrinsic parameter fluctuation in 16-nm-gate n-and p-type Bulk FinFETs

Yu Yu Chen, Wen Tsung Huang, Sheng Chia Hsu, Han Tung Chang, Chieh Yang Chen, Chin Min Yang, Li Wen Chen, Yiming Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, we estimate the influence of random dopants (RDs), interface traps (ITs), and random work functions (WKs) using the experimentally calibrated 3D device simulation on DC characteristic of high/ metal gate n- and p-type bulk fin-typed field-effect-transistors. We further study these intrinsic parameter fluctuations' impact on drain induced barrier lowering (DIBL). The main findings of this work show the RDF and WKF on n-type device are larger than that of p-type one. The DIBL is dominated by the number of random dopants.

Original languageEnglish
Title of host publication2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages442-445
Number of pages4
DOIs
StatePublished - 2013
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: 5 Aug 20138 Aug 2013

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period5/08/138/08/13

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