Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants

Wen Li Sung, Han Tung Chang, Chieh Yang Chen, Pei Jung Chao, Yi-ming Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We study the impact of random dopant fluctuation (RDF) on electrical characteristics of 10-nm-gate high-κ/metal gate gate-all-around silicon nanowire MOSFET devices. To provide the best accuracy of device simulation, model parameters are validated by using full quantum mechanical simulation and calibrated with experimental results. Physical mechanism of RDs inside channel and penetration from the source/drain extensions into the channel is discussed. Electrical characteristic of the device is estimated with respect to different types of RDF.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages951-954
Number of pages4
ISBN (Electronic)9781509039142
DOIs
StatePublished - 21 Nov 2016
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 22 Aug 201625 Aug 2016

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period22/08/1625/08/16

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    Sung, W. L., Chang, H. T., Chen, C. Y., Chao, P. J., & Li, Y. (2016). Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 951-954). [7751556] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751556