Statistical compact modeling of variations in nano MOSFETs

Chung Hsun Lin*, Mohan V. Dunga, Darsen Lu, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

We present a methodology to generate performance-aware corner models--PAM. Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (±σand ±2σ) simulation and MC simulation. Furthermore, PAM supports application-specific corner cards, for example, for gain sensitive applications.

Original languageEnglish
Title of host publication2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages165-166
Number of pages2
DOIs
StatePublished - 14 Aug 2008
Event2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 21 Apr 200823 Apr 2008

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period21/04/0823/04/08

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  • Cite this

    Lin, C. H., Dunga, M. V., Lu, D., Niknejad, A. M., & Hu, C-M. (2008). Statistical compact modeling of variations in nano MOSFETs. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (pp. 165-166). [4530849] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530849