Statistical characterization of BTI-induced high-k dielectric traps in nanoscale transistors

Ta-Hui Wang; Jung Piao Chiu; Yu Heng Liu

doi:10.1007/978-1-4614-7909-3_3

Statistical characterization of BTI-induced high-k dielectric traps in nanoscale transistors

Ta-Hui Wang^*, Jung Piao Chiu, Yu Heng Liu

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

Statistical behavior of BTI-induced high-k dielectric traps in nanometer MOSFETs is characterized. We measure individual trapped charge emission times and single-trapped charge-induced V_t shifts in BTI recovery. Statistical distributions of BTI trap characteristics such as trap spatial and energy distributions and trapped charge activation energy in emission are extracted. We compare the amplitudes of BTI and RTN single-charge-induced ΔV_t. BTI-induced ΔV_t exhibits a larger amplitude distribution tail. An explanation will be given by use of 3D atomistic numerical simulation. In addition, we find that V_t degradation in BTI stress exhibits two stages. The first stage has logarithmic stress time dependence and is believed due to the charging of preexisting high-k dielectric traps. The second stage follows power-law time dependence, which is attributed to dielectric trap creation.

Original language	English
Title of host publication	Bias Temperature Instability for Devices and Circuits
Publisher	Springer New York
Pages	53-74
Number of pages	22
Volume	9781461479093
ISBN (Electronic)	9781461479093
ISBN (Print)	1461479088, 9781461479086
DOIs	https://doi.org/10.1007/978-1-4614-7909-3_3
State	Published - 1 Jul 2014

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title = "Statistical characterization of BTI-induced high-k dielectric traps in nanoscale transistors",

abstract = "Statistical behavior of BTI-induced high-k dielectric traps in nanometer MOSFETs is characterized. We measure individual trapped charge emission times and single-trapped charge-induced Vt shifts in BTI recovery. Statistical distributions of BTI trap characteristics such as trap spatial and energy distributions and trapped charge activation energy in emission are extracted. We compare the amplitudes of BTI and RTN single-charge-induced ΔVt. BTI-induced ΔVt exhibits a larger amplitude distribution tail. An explanation will be given by use of 3D atomistic numerical simulation. In addition, we find that Vt degradation in BTI stress exhibits two stages. The first stage has logarithmic stress time dependence and is believed due to the charging of preexisting high-k dielectric traps. The second stage follows power-law time dependence, which is attributed to dielectric trap creation.",

author = "Ta-Hui Wang and Chiu, {Jung Piao} and Liu, {Yu Heng}",

year = "2014",

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doi = "10.1007/978-1-4614-7909-3_3",

language = "English",

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T1 - Statistical characterization of BTI-induced high-k dielectric traps in nanoscale transistors

AU - Wang, Ta-Hui

AU - Chiu, Jung Piao

AU - Liu, Yu Heng

PY - 2014/7/1

Y1 - 2014/7/1

N2 - Statistical behavior of BTI-induced high-k dielectric traps in nanometer MOSFETs is characterized. We measure individual trapped charge emission times and single-trapped charge-induced Vt shifts in BTI recovery. Statistical distributions of BTI trap characteristics such as trap spatial and energy distributions and trapped charge activation energy in emission are extracted. We compare the amplitudes of BTI and RTN single-charge-induced ΔVt. BTI-induced ΔVt exhibits a larger amplitude distribution tail. An explanation will be given by use of 3D atomistic numerical simulation. In addition, we find that Vt degradation in BTI stress exhibits two stages. The first stage has logarithmic stress time dependence and is believed due to the charging of preexisting high-k dielectric traps. The second stage follows power-law time dependence, which is attributed to dielectric trap creation.

AB - Statistical behavior of BTI-induced high-k dielectric traps in nanometer MOSFETs is characterized. We measure individual trapped charge emission times and single-trapped charge-induced Vt shifts in BTI recovery. Statistical distributions of BTI trap characteristics such as trap spatial and energy distributions and trapped charge activation energy in emission are extracted. We compare the amplitudes of BTI and RTN single-charge-induced ΔVt. BTI-induced ΔVt exhibits a larger amplitude distribution tail. An explanation will be given by use of 3D atomistic numerical simulation. In addition, we find that Vt degradation in BTI stress exhibits two stages. The first stage has logarithmic stress time dependence and is believed due to the charging of preexisting high-k dielectric traps. The second stage follows power-law time dependence, which is attributed to dielectric trap creation.

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