Statistical Characterization and Modeling of the Temporal Evolutions of \Delta V\rm t Distribution in NBTI Recovery in Nanometer MOSFETs

Jung Piao Chiu*, Yu Heng Liu, Hung Da Hsieh, Chi Wei Li, Min Cheng Chen, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

NBTI trapped charge characteristics and recovery mechanisms are examined by a statistical study of individual trapped charge emissions in nanoscale HfSiON/metal gate pMOSFETs. We measure individual trapped charge emission times in NBTI recovery in a large number of devices. The characteristic time distributions of the first three emitted holes are obtained. The distributions can be well modeled by using a thermally-assisted tunnel (ThAT) detrapping model. NBTI trapped charge energy and spatial distributions and its activation energy distribution in the ThAT model are discussed and extracted. Based on the ThAT model and measured result of single-charge induced V\rm t shifts, we develop a statistical NBTI recovery \Delta V\rm t evolution model. Our model can well reproduce the temporal evolutions of a $\Delta V\rm t distribution in a number of NBTI stressed nanometer MOSFETs in relaxation.

Original languageEnglish
Article number6458996
Pages (from-to)978-984
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume60
Issue number3
DOIs
StatePublished - 12 Feb 2013

Keywords

  • Activation energy
  • charge emission time
  • negative bias temperature instability
  • recovery
  • statistical model

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