Statistical analysis of metal gate workfunction variability, process variation, and random dopant fluctuation in nano-CMOS circuits

Chih Hong Hwang*, Tien Yeh Li, Ming Hung Han, Kuo Fu Lee, Hui Wen Cheng, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

This work for the first time estimates the influences of the intrinsic parameter fluctuations consisting of metal gate workfunction fluctuation (WKF), process variation effect (PVE) and random dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold voltage fluctuation; however, the WKF brings less impact on the gate capacitance due to the screening effect of the inversion layer. The fluctuation of timing characteristics depends on the threshold voltage fluctuation, and therefore is proportional to the trend of threshold voltage fluctuation. For an amplifier circuit, the high-frequency characteristics, the circuit gain, the 3dB bandwidth, the unity-gain bandwidth power, and the power-added efficiency, are explored consequently. Similar to the trend of the cutoff frequency, the PVE and RDF dominate both the device and circuits characteristic fluctuations due to the significant gate capacitance fluctuations and the WKF is less important at this simulation scenario. The extensive study assesses the fluctuations on circuit performance and reliability, which can in turn be used to optimize nanoscale MOSFET and circuits.

Original languageEnglish
Title of host publicationSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs
StatePublished - 2009
EventSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States
Duration: 9 Sep 200911 Sep 2009

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

ConferenceSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
CountryUnited States
CitySan Diego, CA
Period9/09/0911/09/09

Keywords

  • Circuit
  • Coupled device-circuit simulation
  • Emerging device technology
  • Intrinsic parameter fluctuation
  • Modeling and simulation
  • Nanoscale MOSFET

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