Stacked-nitride oxide gate MISFET with high hot-carrier-immunity

Hiroshi Iwai; Hisayo Sasaki Momose; Toyota Morimoto; Yoshio Ozawa; Kikuo Yamabe

Stacked-nitride oxide gate MISFET with high hot-carrier-immunity

Hiroshi Iwai^*, Hisayo Sasaki Momose, Toyota Morimoto, Yoshio Ozawa, Kikuo Yamabe

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

The hot-carrier-induced reliability of LPCVD (low-pressure chemical vapor deposition) stacked nitride oxide MISFETs was studied by changing the nitride and oxide film thickness. When the nitride film was thick, the shift in threshold voltage was significant. When the nitride thickness was decreased to 3-4 nm, this threshold voltage shift was less of a problem, but interface state generation caused trouble. Densification of the stacked film by high temperature RTP was investigated for any further film quality improvements for the hot-carrier reliability. Simple RTA did not improve the reliability at all. On the other hand, RTN on the stacked-nitride film improved it drastically. In addition, after RTN, the stacked-nitride film withstood re-oxidation, while samples tested after RTA did not.

Original language	English
Pages (from-to)	235-238
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - Dec 1990
Event	1990 International Electron Devices Meeting - San Francisco, CA, USA Duration: 9 Dec 1990 → 12 Dec 1990

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@article{d243cc1df3f34c7a92d934f6253f44da,

title = "Stacked-nitride oxide gate MISFET with high hot-carrier-immunity",

abstract = "The hot-carrier-induced reliability of LPCVD (low-pressure chemical vapor deposition) stacked nitride oxide MISFETs was studied by changing the nitride and oxide film thickness. When the nitride film was thick, the shift in threshold voltage was significant. When the nitride thickness was decreased to 3-4 nm, this threshold voltage shift was less of a problem, but interface state generation caused trouble. Densification of the stacked film by high temperature RTP was investigated for any further film quality improvements for the hot-carrier reliability. Simple RTA did not improve the reliability at all. On the other hand, RTN on the stacked-nitride film improved it drastically. In addition, after RTN, the stacked-nitride film withstood re-oxidation, while samples tested after RTA did not.",

author = "Hiroshi Iwai and Momose, {Hisayo Sasaki} and Toyota Morimoto and Yoshio Ozawa and Kikuo Yamabe",

year = "1990",

month = dec,

language = "English",

pages = "235--238",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 09-12-1990 Through 12-12-1990",

}

TY - JOUR

T1 - Stacked-nitride oxide gate MISFET with high hot-carrier-immunity

AU - Iwai, Hiroshi

AU - Momose, Hisayo Sasaki

AU - Morimoto, Toyota

AU - Ozawa, Yoshio

AU - Yamabe, Kikuo

PY - 1990/12

Y1 - 1990/12

N2 - The hot-carrier-induced reliability of LPCVD (low-pressure chemical vapor deposition) stacked nitride oxide MISFETs was studied by changing the nitride and oxide film thickness. When the nitride film was thick, the shift in threshold voltage was significant. When the nitride thickness was decreased to 3-4 nm, this threshold voltage shift was less of a problem, but interface state generation caused trouble. Densification of the stacked film by high temperature RTP was investigated for any further film quality improvements for the hot-carrier reliability. Simple RTA did not improve the reliability at all. On the other hand, RTN on the stacked-nitride film improved it drastically. In addition, after RTN, the stacked-nitride film withstood re-oxidation, while samples tested after RTA did not.

AB - The hot-carrier-induced reliability of LPCVD (low-pressure chemical vapor deposition) stacked nitride oxide MISFETs was studied by changing the nitride and oxide film thickness. When the nitride film was thick, the shift in threshold voltage was significant. When the nitride thickness was decreased to 3-4 nm, this threshold voltage shift was less of a problem, but interface state generation caused trouble. Densification of the stacked film by high temperature RTP was investigated for any further film quality improvements for the hot-carrier reliability. Simple RTA did not improve the reliability at all. On the other hand, RTN on the stacked-nitride film improved it drastically. In addition, after RTN, the stacked-nitride film withstood re-oxidation, while samples tested after RTA did not.

UR - http://www.scopus.com/inward/record.url?scp=0025575978&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0025575978

SP - 235

EP - 238

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 9 December 1990 through 12 December 1990

ER -

Stacked-nitride oxide gate MISFET with high hot-carrier-immunity

Abstract

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