Stable resistive switching characteristics of Al2O3 layers inserted in HfO2 based RRAM devices

Chun Yang Huang, Jheng Hong Jieng, Tseung-Yuen Tseng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Resistive switching random access memory (RRAM) has attracted extensive attention for next-generation nonvolatile memory application due to the merits of low power consumption, high speed operation, and high density integration. The resistive switching (RS) characteristics of various metal oxides have been studied. Among those materials, HfO2 is one of the appealing materials that had received considerable attention owing to a high dielectric constant, simple composition, and its standard CMOS processes compatibility. However, the thermal stability of HfO2 thin film is a serious issue for memory characteristics due to the low crystalline temperature. In this work, we utilized ALD growth HfO2 thin films with inserted different amount of Al2O3 layers as RS layer for crystallization and RS characteristics study. From the experimental results, the crystalline temperatures depend on the amount of inserted Al2O3 layers. By the way, the forming voltages were modulated by using different amount of Al2O3 layers inserted in HfO2 thin film, changed from 2.5 V (HfO2) to 4.1 V (Al2O 3). Moreover, the device shows better resistive switching performance than pure HfO2 and pure Al2O3 devices, such as more stable operation voltage and higher resistive switching cycles (11000 cycles).

Original languageEnglish
Title of host publicationAdvances in Multifunctional Materials and Systems II - A Collection of Papers Presented at the 10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013
PublisherAmerican Ceramic Society
Pages103-109
Number of pages7
ISBN (Print)9781118771273
StatePublished - 1 Jan 2014
Event10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013 - Coronado, CA, United States
Duration: 2 Jun 20136 Jun 2013

Publication series

NameCeramic Transactions
Volume245
ISSN (Print)1042-1122

Conference

Conference10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013
CountryUnited States
CityCoronado, CA
Period2/06/136/06/13

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  • Cite this

    Huang, C. Y., Jieng, J. H., & Tseng, T-Y. (2014). Stable resistive switching characteristics of Al2O3 layers inserted in HfO2 based RRAM devices. In Advances in Multifunctional Materials and Systems II - A Collection of Papers Presented at the 10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013 (pp. 103-109). (Ceramic Transactions; Vol. 245). American Ceramic Society.