Stable encapsulated organic TFT with a spin-coated poly(4-vinylphenol-co- methyl methacrylate) dielectric

Hsiao-Wen Zan*, Ting Yu Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

The influences of encapsulation on the hysteresis and the gate-bias-stress effects (both positive and negative gate bias stresses) of pentacene organic thin-film transistors (OTFTs) with poly(4-vinylphenol) and poly(4-vinylphenol- co-methyl methacrylate) (PVP-PMMA) gate dielectrics are investigated. The encapsulation and the use of less polar gate dielectrics like PVP-PMMA copolymers are both important to suppress moisture adsorption and to obtain a stable pentacene OTFT. Compared to the air-stable OTFT with a fluoropolymer dielectric, the stable encapsulated OTFT with a PVP-PMMA dielectric is a low-cost promising candidate for mass production consideration.

Original languageEnglish
Article number5872005
Pages (from-to)1131-1133
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number8
DOIs
StatePublished - 1 Aug 2011

Keywords

  • Bias stress
  • pentacene
  • poly(4-vinylphenol-co-methyl methacrylate) (PVP-PMMA)
  • reliability
  • thin-film transistor

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