Stabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatment

Y. J. Mei, T. C. Chang*, S. J. Chang, Fu-Ming Pan, M. S.K. Chen, A. Tuan, S. Chou, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Fluorine doped oxide (SiO2-XFX) films have been found to exhibit a low dielectric constant. However, the critical issue about SiO2-XFX is its low resistance to moisture which causes the dielectric constant of the film to increase with time. In this work, N2O and NH3 plasma post-treatments are applied to as-deposited SiO2-XFX films. It has been observed that NH3 plasma post-treatments of SiO2-XFX are quite efficient at blocking moisture. The dielectric constant and stress values of the SiO2-XFX films after the N2O and NH3 plasma post-treatments are very stable. The disadvantage of N2O plasma post-treatment is that the dielectric constant of the SiO2-XFX film increases from 3.21 to 3.6 due to fluorine desorption from the SiO2-XFX network. On the other hand, NH3 plasma post-treatment is more efficient at blocking moisture and keeping the low dielectric constant unchanged due to surface nitridation of the SiO2-XFX film.

Original languageEnglish
Pages (from-to)501-506
Number of pages6
JournalThin Solid Films
Volume308-309
Issue number1-4
DOIs
StatePublished - 31 Oct 1997

Keywords

  • Fluorine dope oxide
  • Low dielectric
  • Plasma post-treatment

Fingerprint Dive into the research topics of 'Stabilizing dielectric constant of fluorine-doped SiO<sub>2</sub> film by N<sub>2</sub>O and NH<sub>3</sub> plasma post-treatment'. Together they form a unique fingerprint.

  • Cite this

    Mei, Y. J., Chang, T. C., Chang, S. J., Pan, F-M., Chen, M. S. K., Tuan, A., Chou, S., & Chang, C. Y. (1997). Stabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatment. Thin Solid Films, 308-309(1-4), 501-506. https://doi.org/10.1016/S0040-6090(97)00482-3