Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2

Golnaz Karbasian; Roberto Dos Reis; Ajay K. Yadav; Ava J. Tan; Chen-Ming Hu; Sayeef Salahuddin

doi:10.1063/1.4993739

Stabilization of ferroelectric phase in tungsten capped Hf_0.8Zr_0.2O₂

Golnaz Karbasian, Roberto Dos Reis, Ajay K. Yadav, Ava J. Tan, Chen-Ming Hu, Sayeef Salahuddin^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We report on the stabilization of the ferroelectric phase in Hf_0.8Zr_0.2O₂ with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf_0.8Zr_0.2O₂ after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric Hf_xZr_1-xO₂ commonly capped with TiN.

Original language	English
Article number	022907
Journal	Applied Physics Letters
Volume	111
Issue number	2
DOIs	https://doi.org/10.1063/1.4993739
State	Published - 10 Jul 2017

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title = "Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2",

abstract = "We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf0.8Zr0.2O2 after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric HfxZr1-xO2 commonly capped with TiN.",

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AU - Karbasian, Golnaz

AU - Dos Reis, Roberto

AU - Yadav, Ajay K.

AU - Tan, Ava J.

AU - Hu, Chen-Ming

AU - Salahuddin, Sayeef

PY - 2017/7/10

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N2 - We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf0.8Zr0.2O2 after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric HfxZr1-xO2 commonly capped with TiN.

AB - We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf0.8Zr0.2O2 after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric HfxZr1-xO2 commonly capped with TiN.

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Stabilization of ferroelectric phase in tungsten capped Hf_0.8Zr_0.2O₂

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