Stability of High performance p-type SnO TFTs

C. W. Zhong, H. Y. Tsai, Horng-Chih Lin, K. C. Liu, T. Y. Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline SnO, resulting in decent field-effect mobility and high on/off current ratio. Electrical stability was evaluated by examining the threshold voltage shift under negative bias stresses at different stress times. A scenario considering the passivation/de-passivation of acceptor defects in the channel and the hole trapping of the gate oxide is proposed to explain the observed instability of the SnO TFTs.

Original languageEnglish
Title of host publicationProceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages84-87
Number of pages4
ISBN (Electronic)9781479999286, 9781479999286
DOIs
StatePublished - 25 Aug 2015
Event22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan
Duration: 29 Jun 20152 Jul 2015

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2015-August

Conference

Conference22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
CountryTaiwan
CityHsinchu
Period29/06/152/07/15

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