Abstract
For the integration of the high-k dielectrics to advanced CMOS process, the stabilities of high-k thin films for moisture ambient, ultra-pure water and resist process were investigated. Not only rare earth oxides but also ZrO 2 was found to be degraded in the stability test. To suppress the degradation during the wet process, it is recommendable to cover the films by gate electrode and sidewalls by in-situ or dry process.
Original language | English |
---|---|
Pages | 157-168 |
Number of pages | 12 |
State | Published - 2003 |
Event | Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States Duration: 20 Oct 2002 → 24 Oct 2002 |
Conference
Conference | Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues |
---|---|
Country | United States |
City | Salt Lake City, UT |
Period | 20/10/02 → 24/10/02 |