Stability of high-k thin films for wet process

A. Kikuchi*, S. Akama, S. Ohmi, H. Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

For the integration of the high-k dielectrics to advanced CMOS process, the stabilities of high-k thin films for moisture ambient, ultra-pure water and resist process were investigated. Not only rare earth oxides but also ZrO 2 was found to be degraded in the stability test. To suppress the degradation during the wet process, it is recommendable to cover the films by gate electrode and sidewalls by in-situ or dry process.

Original languageEnglish
Pages157-168
Number of pages12
StatePublished - 2003
EventPhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States
Duration: 20 Oct 200224 Oct 2002

Conference

ConferencePhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
CountryUnited States
CitySalt Lake City, UT
Period20/10/0224/10/02

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