Stability of high-k thin films for wet process

A. Kikuchi; S. Akama; S. Ohmi; H. Iwai

Stability of high-k thin films for wet process

A. Kikuchi^*, S. Akama, S. Ohmi, H. Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

For the integration of the high-k dielectrics to advanced CMOS process, the stabilities of high-k thin films for moisture ambient, ultra-pure water and resist process were investigated. Not only rare earth oxides but also ZrO ₂ was found to be degraded in the stability test. To suppress the degradation during the wet process, it is recommendable to cover the films by gate electrode and sidewalls by in-situ or dry process.

Original language	English
Pages	157-168
Number of pages	12
State	Published - 2003
Event	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States Duration: 20 Oct 2002 → 24 Oct 2002

Conference

Conference	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
Country	United States
City	Salt Lake City, UT
Period	20/10/02 → 24/10/02

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title = "Stability of high-k thin films for wet process",

abstract = "For the integration of the high-k dielectrics to advanced CMOS process, the stabilities of high-k thin films for moisture ambient, ultra-pure water and resist process were investigated. Not only rare earth oxides but also ZrO 2 was found to be degraded in the stability test. To suppress the degradation during the wet process, it is recommendable to cover the films by gate electrode and sidewalls by in-situ or dry process.",

author = "A. Kikuchi and S. Akama and S. Ohmi and H. Iwai",

year = "2003",

language = "English",

pages = "157--168",

note = "null ; Conference date: 20-10-2002 Through 24-10-2002",

}

Kikuchi, A, Akama, S, Ohmi, S & Iwai, H 2003, 'Stability of high-k thin films for wet process', Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States, 20/10/02 - 24/10/02 pp. 157-168.

Stability of high-k thin films for wet process. / Kikuchi, A.; Akama, S.; Ohmi, S.; Iwai, H.

2003. 157-168 Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Stability of high-k thin films for wet process

AU - Kikuchi, A.

AU - Akama, S.

AU - Ohmi, S.

AU - Iwai, H.

PY - 2003

Y1 - 2003

N2 - For the integration of the high-k dielectrics to advanced CMOS process, the stabilities of high-k thin films for moisture ambient, ultra-pure water and resist process were investigated. Not only rare earth oxides but also ZrO 2 was found to be degraded in the stability test. To suppress the degradation during the wet process, it is recommendable to cover the films by gate electrode and sidewalls by in-situ or dry process.

AB - For the integration of the high-k dielectrics to advanced CMOS process, the stabilities of high-k thin films for moisture ambient, ultra-pure water and resist process were investigated. Not only rare earth oxides but also ZrO 2 was found to be degraded in the stability test. To suppress the degradation during the wet process, it is recommendable to cover the films by gate electrode and sidewalls by in-situ or dry process.

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M3 - Paper

AN - SCOPUS:8744274145

SP - 157

EP - 168

Y2 - 20 October 2002 through 24 October 2002

ER -