Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination

Zhao Yang , Ting Meng, Qun Zhang*, Han-Ping Shieh

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Amorphous indium-tungsten oxide (a-IWO) thin-film transistors (TFTs) were prepared by the RF-sputtering method, and their electrical stability under various conditions of wavelength light illumination was investigated. It was found that the electrical stability of the devices was dependent on the light wavelength and the illumination time. The analysis reveals that the improvement of the light illumination stability of the a-IWO-TFTs is ascribed to the oxygen vacancies transition between V-O-V-O(+) and V-O-V-O(2+) under different wavelength illuminations.
Original languageEnglish
Pages (from-to)437-440
JournalIeee Electron Device Letters
Volume37
Issue number4
DOIs
StatePublished - Apr 2016

Keywords

  • Illumination stability; indium-tungstenoxide (IWO); thin-film transistors (TFTs)

Fingerprint Dive into the research topics of 'Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination'. Together they form a unique fingerprint.

  • Cite this