Stability improvement of organic thin-film transistors using stacked gate dielectrics

Po Yuan Lo*, Pei-Wen Li, Yi Jen Chan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Poly-3-hexylthiophene organic thin-film transistors (OTFTs) were fabricated with different kinds of stacked gate dielectrics, which exhibit an individual effective trap behavior. The transistor fabricated with a stacked gate dielectric in a donor-like trap behavior exhibits a significant current hysteresis loop, a large threshold voltage shift, and subthreshold swing changes during operation in the dark and under illumination. The device performance is improved using a stacked gate dielectric with acceptor-like traps. The mechanisms of OTFTs with an acceptor-like trap dielectric and a donor-like dielectric are discussed.

Original languageEnglish
Article number5582275
Pages (from-to)3131-3136
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number11
DOIs
StatePublished - 1 Nov 2010

Keywords

  • Organic thin-film transistor (OTFT)
  • phototransistor poly-3-hexylthiophene (P3HT)
  • stacked gate dielectric

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