Stability effects of reflective mirror on GaN LED/mirror /Si via wafer bonding and laser lift-off techniques

Ray-Hua Horng, S. H. Huang, D. S. Wuu, Chao Kun Lin, Heng Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN vertical-conducting light-emitting diodes (LEDs) with high thermal stability mirror on Si substrate have been fabricated using a combination of wafer-bonding and laser lift-off techniques. The thermal stabilities of NiO/Ag and NiO/Ag/Ni mirrors in vertical GaN/mirror/Si structure were studied. It was found that the NiO/Ag/Ni mirror presents the best performance, where the specific contact resistance and the reflectivity can achieve 8.37 × 10-3 Ω-cm2 and 92 % at 470 nm after oxidation annealing (500°C for 10 min). The top Ni layer could protect the Ag mirror from degradation of the high temperature annealing. The output powers of GaN/sapphire LED and LEDs with NiO/Au/Ag and NiO/Ag/Ni mirrors show 4.5, 4.3 and 13 mW, respectively.

Original languageEnglish
Title of host publicationECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
Pages175-191
Number of pages17
Edition5
DOIs
StatePublished - 1 Dec 2007
Event47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
Duration: 7 Oct 200712 Oct 2007

Publication series

NameECS Transactions
Number5
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period7/10/0712/10/07

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    Horng, R-H., Huang, S. H., Wuu, D. S., Lin, C. K., & Liu, H. (2007). Stability effects of reflective mirror on GaN LED/mirror /Si via wafer bonding and laser lift-off techniques. In ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices (5 ed., pp. 175-191). (ECS Transactions; Vol. 11, No. 5). https://doi.org/10.1149/1.2783871