Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells

Vita Pi Ho Hu; Ming Long Fan; Pin Su; Ching Te Chuang

doi:10.1109/ESSDERC.2012.6343337

Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells

Vita Pi Ho Hu^*, Ming Long Fan, Pin Su, Ching Te Chuang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

InGaAs-OI and GeOI SRAM cells using optimized threshold voltage (Vt) design to enhance the intrinsic variation immunity of high-performance (super-threshold) and low-voltage (near-/sub-threshold) 6T SRAM cells are presented. For low-voltage SRAMs operating at low Vdd, low-Vt design shows smaller variability while the design trade-off between performance and leakage should be considered. For highperformance SRAMs operating at high Vdd, high-Vt design shows smaller variability. Moreover, compared with the SOI SRAMs with high-Vt design, InGaAs-OI/GeOI hetero-channel SRAM cells with high-Vt design exhibit improved Read/Write stability and performance, and maintain comparable RSNM variations for the high-performance SRAM applications.

Original language	English
Title of host publication	2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages	77-80
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2012.6343337
State	Published - 11 Dec 2012
Event	42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France Duration: 17 Sep 2012 → 21 Sep 2012

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	42nd European Solid-State Device Research Conference, ESSDERC 2012
Country	France
City	Bordeaux
Period	17/09/12 → 21/09/12

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Cite this

@inproceedings{917c78f97311491ab0abce10dd5757e2,

title = "Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells",

abstract = "InGaAs-OI and GeOI SRAM cells using optimized threshold voltage (Vt) design to enhance the intrinsic variation immunity of high-performance (super-threshold) and low-voltage (near-/sub-threshold) 6T SRAM cells are presented. For low-voltage SRAMs operating at low Vdd, low-Vt design shows smaller variability while the design trade-off between performance and leakage should be considered. For highperformance SRAMs operating at high Vdd, high-Vt design shows smaller variability. Moreover, compared with the SOI SRAMs with high-Vt design, InGaAs-OI/GeOI hetero-channel SRAM cells with high-Vt design exhibit improved Read/Write stability and performance, and maintain comparable RSNM variations for the high-performance SRAM applications.",

author = "Hu, {Vita Pi Ho} and Fan, {Ming Long} and Pin Su and Chuang, {Ching Te}",

year = "2012",

month = dec,

day = "11",

doi = "10.1109/ESSDERC.2012.6343337",

language = "English",

isbn = "9781467317078",

series = "European Solid-State Device Research Conference",

pages = "77--80",

booktitle = "2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012",

note = "null ; Conference date: 17-09-2012 Through 21-09-2012",

}

Hu, VPH, Fan, ML, Su, P & Chuang, CT 2012, Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells. in 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012., 6343337, European Solid-State Device Research Conference, pp. 77-80, 42nd European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, 17/09/12. https://doi.org/10.1109/ESSDERC.2012.6343337

Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells. / Hu, Vita Pi Ho; Fan, Ming Long; Su, Pin; Chuang, Ching Te.

2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. 2012. p. 77-80 6343337 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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