TY - GEN
T1 - Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells
AU - Hu, Vita Pi Ho
AU - Fan, Ming Long
AU - Su, Pin
AU - Chuang, Ching Te
PY - 2012/12/11
Y1 - 2012/12/11
N2 - InGaAs-OI and GeOI SRAM cells using optimized threshold voltage (Vt) design to enhance the intrinsic variation immunity of high-performance (super-threshold) and low-voltage (near-/sub-threshold) 6T SRAM cells are presented. For low-voltage SRAMs operating at low Vdd, low-Vt design shows smaller variability while the design trade-off between performance and leakage should be considered. For highperformance SRAMs operating at high Vdd, high-Vt design shows smaller variability. Moreover, compared with the SOI SRAMs with high-Vt design, InGaAs-OI/GeOI hetero-channel SRAM cells with high-Vt design exhibit improved Read/Write stability and performance, and maintain comparable RSNM variations for the high-performance SRAM applications.
AB - InGaAs-OI and GeOI SRAM cells using optimized threshold voltage (Vt) design to enhance the intrinsic variation immunity of high-performance (super-threshold) and low-voltage (near-/sub-threshold) 6T SRAM cells are presented. For low-voltage SRAMs operating at low Vdd, low-Vt design shows smaller variability while the design trade-off between performance and leakage should be considered. For highperformance SRAMs operating at high Vdd, high-Vt design shows smaller variability. Moreover, compared with the SOI SRAMs with high-Vt design, InGaAs-OI/GeOI hetero-channel SRAM cells with high-Vt design exhibit improved Read/Write stability and performance, and maintain comparable RSNM variations for the high-performance SRAM applications.
UR - http://www.scopus.com/inward/record.url?scp=84870602962&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2012.6343337
DO - 10.1109/ESSDERC.2012.6343337
M3 - Conference contribution
AN - SCOPUS:84870602962
SN - 9781467317078
T3 - European Solid-State Device Research Conference
SP - 77
EP - 80
BT - 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Y2 - 17 September 2012 through 21 September 2012
ER -