Abstract
InGaAs-OI and GeOI SRAM cells using optimized threshold voltage (Vt) design to enhance the intrinsic variation immunity of high-performance (super-threshold) and low-voltage (near-/sub-threshold) 6T SRAM cells are presented. For low-voltage SRAMs operating at low Vdd, low-Vt design shows smaller variability while the design trade-off between performance and leakage should be considered. For highperformance SRAMs operating at high Vdd, high-Vt design shows smaller variability. Moreover, compared with the SOI SRAMs with high-Vt design, InGaAs-OI/GeOI hetero-channel SRAM cells with high-Vt design exhibit improved Read/Write stability and performance, and maintain comparable RSNM variations for the high-performance SRAM applications.
| Original language | English |
|---|---|
| Title of host publication | 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012 |
| Pages | 77-80 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 11 Dec 2012 |
| Event | 42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France Duration: 17 Sep 2012 → 21 Sep 2012 |
Publication series
| Name | European Solid-State Device Research Conference |
|---|---|
| ISSN (Print) | 1930-8876 |
Conference
| Conference | 42nd European Solid-State Device Research Conference, ESSDERC 2012 |
|---|---|
| Country | France |
| City | Bordeaux |
| Period | 17/09/12 → 21/09/12 |
Fingerprint Dive into the research topics of 'Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells'. Together they form a unique fingerprint.
Cite this
Hu, V. P. H., Fan, M. L., Su, P., & Chuang, C. T. (2012). Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells. In 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012 (pp. 77-80). [6343337] (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2012.6343337