Stability analysis for UTB GeOI 6T SRAM cells considering NBTI and PBTI

Vita Pi Ho Hu, Ming Long Fan, Pin Su, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper investigates the impacts of Negative and Positive Bias Temperature Instabilities (NBTI and PBTI) on the stability of Ultra-Thin-Body (UTB) GeOI 6T SRAMs compared with the SOI counterparts. Worst case stress scenarios for Read and Write operations are analyzed. For UTB GeOI SRAMs, PBTI dominates the degradations in Read Static Noise Margin (RSNM) and Hold Static Noise Margin (HSNM), while for UTB SOI SRAMs, NBTI dominates the degradations in RSNM and HSNM. Write Static Noise Margin (WSNM) only slightly degrades due to NBTI and PBTI. Threshold voltage design and Word-Line Under-Drive (WLUD) Read-Assist techniques are analyzed to mitigate/compensate the stability degradations due to NBTI/PBTI for UTB GeOI SRAM cells. Compared with the nominal UTB GeOI SRAM cells with low-Vth design, UTB GeOI SRAMs with high-Vth design suffer less NBTI/PBTI degradations and exhibit significant improvement in RSNM and HSNM compared with the nominal UTB SOI SRAMs.

Original languageEnglish
Title of host publication2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973750
DOIs
StatePublished - 3 Jun 2015
Event2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan
Duration: 27 Apr 201529 Apr 2015

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume2015-June
ISSN (Print)1930-8868

Conference

Conference2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
CountryTaiwan
CityHsinchu
Period27/04/1529/04/15

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