SrTiO 3 -SiO 2 oxide films for possible high-k gate dielectric applications

Chun Chieh Lin, Li Wen Lai, Chih Yang Lin, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Amorphous thin films of SrTiO 3 -SiO 2 high-k dielectric oxides were deposited on p-Si substrate by sputtering from the targets made by SrTiO 3 and SiO 2 powder mixtures. The surface morphology, crystal structure, chemical bonding configuration, and depth profile of the composition were investigated by using scanning electron microscopy, glancing incident angle X-ray diffraction, X-ray photoelectron spectroscopy, and Auger electron spectroscopy, respectively. The capacitance-voltage (CV) and current-voltage characteristics were used for demonstrating their electrical properties. The SrTiO 3 -SiO 2 thin films remained as amorphous structures when annealed up to 900 °C. The Pt/SrTiO 3 -SiO 2 /Si MOS structure had a low leakage current density of ∼ 2 × 10 - 8  A/cm 2 measured at 100 kV/cm and dielectric constant of 24 for 700 °C-annealed film. The films annealed at 600 °C showed typical CV characteristics. However, the deformed CV curves were found for films annealed at 700 °C due to the diffusion of Ti species in the SrTiO 3 -SiO 2 film into the Si substrate.

Original languageEnglish
Pages (from-to)8005-8008
Number of pages4
JournalThin Solid Films
Volume515
Issue number20-21
DOIs
StatePublished - 31 Jul 2007

Keywords

  • Dielectric constant
  • Gate oxide
  • High-k
  • Leakage current

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