Sr0.8Bi2.5Ta1.2Nb0.9O 9+x ferroelectric thin films prepared by two-target off-axis radio frequency magnetron sputtering

Huei Mei Tsai*, Pang Lin, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

Ferroelectric Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films on a Pt/SiO2/Si substrate were prepared by using two-target off-axis radio frequency magnetron sputtering, and their structural and electrical properties were investigated. The films crystallized with high (115) diffraction intensity at a substrate temperature of 600°C, and showed columnar microstructure. The 600°C sputtered films with a thickness of 440 nm exhibited remanent polarization (2Pr) of 52μC/cm2 and coercive field (2Ec) 28 kV/cm at an applied voltage of 1.5 V. The leakage current density was about 6×10-6A/cm2 at an electric field of 50 kV/cm. The films demonstrated fatigue free characteristics up to 1.0×1010 switching cycles under a 3 V bipolar 1 MHz square wave.

Original languageEnglish
Pages (from-to)1787-1789
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number14
DOIs
StatePublished - 1 Dec 1998

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