SrO capping effect for La2O3/Ce-silicate gate dielectrics

K. Kakushima*, K. Okamoto, T. Koyanagi, M. Kouda, K. Tachi, T. Kawanago, J. Song, P. Ahmet, H. Nohira, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The chemical bonding states and electrical characteristics of SrO capped La2O3/CeOx gate dielectric have been examined. Angle-resolved X-ray photoelectron spectroscopy measurement has revealed that Sr atoms diffuse into silicate layer to form SrLa-silicate after annealing. Owing to the incorporation of Sr atoms into silicate layer, a transistor operation with an equivalent oxide thickness (EOT) below 0.5 nm has been demonstrated. A strongly degraded effective electron mobility of 78 cm2/V s at 1 MV/cm has been obtained, which fit well with the general trend in small EOT range below 1 nm. Although process optimization is needed to improve the performance of transistors, Sr capping technique can be useful for EOT scaling.

Original languageEnglish
Pages (from-to)356-359
Number of pages4
JournalMicroelectronics Reliability
Volume50
Issue number3
DOIs
StatePublished - Mar 2010

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    Kakushima, K., Okamoto, K., Koyanagi, T., Kouda, M., Tachi, K., Kawanago, T., Song, J., Ahmet, P., Nohira, H., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2010). SrO capping effect for La2O3/Ce-silicate gate dielectrics. Microelectronics Reliability, 50(3), 356-359. https://doi.org/10.1016/j.microrel.2009.12.004