Spray deposition process study of SnO2 silicon solar cells using orthogonal experimental design

L. M. Chen; H. Y. Li; K. B. Sarachik; Wei Hwang; E. S. Yang

doi:10.1016/0038-092X(85)90094-5

Spray deposition process study of SnO₂ silicon solar cells using orthogonal experimental design

L. M. Chen^*, H. Y. Li, K. B. Sarachik, Wei Hwang, E. S. Yang

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article

4 Scopus citations

Abstract

With the "orthogonal experimental design" (OED), the dependence of conductivity and transparency of tin oxide films and open circuit voltage V_oc of SIS solar cells on the spray deposition process factors was studied. The OED technique was found to be a powerful method for realizing the best factor combination. Using OED, curves were obtained which clearly depict the effects of each factor on the SIS characteristics. The results of the experiments also illustrate exactly which variation in fabrication technique most affects the sheet resistance, V_oc, and film transparency. Under the optimal combination of conditions, a thin film doped with NH₄F was obtained, with about 90% transmission and a sheet resistance of about 80 Ω/□, along with an SIS structure with a V_oc of about 0.61 V.

Original language	English
Pages (from-to)	73-82
Number of pages	10
Journal	Solar Energy
Volume	34
Issue number	1
DOIs	https://doi.org/10.1016/0038-092X(85)90094-5
State	Published - 1 Jan 1985

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Chen, L. M., Li, H. Y., Sarachik, K. B., Hwang, W., & Yang, E. S. (1985). Spray deposition process study of SnO₂ silicon solar cells using orthogonal experimental design. Solar Energy, 34(1), 73-82. https://doi.org/10.1016/0038-092X(85)90094-5

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abstract = "With the {"}orthogonal experimental design{"} (OED), the dependence of conductivity and transparency of tin oxide films and open circuit voltage Voc of SIS solar cells on the spray deposition process factors was studied. The OED technique was found to be a powerful method for realizing the best factor combination. Using OED, curves were obtained which clearly depict the effects of each factor on the SIS characteristics. The results of the experiments also illustrate exactly which variation in fabrication technique most affects the sheet resistance, Voc, and film transparency. Under the optimal combination of conditions, a thin film doped with NH4F was obtained, with about 90% transmission and a sheet resistance of about 80 Ω/□, along with an SIS structure with a Voc of about 0.61 V.",

author = "Chen, {L. M.} and Li, {H. Y.} and Sarachik, {K. B.} and Wei Hwang and Yang, {E. S.}",

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AU - Chen, L. M.

AU - Li, H. Y.

AU - Sarachik, K. B.

AU - Hwang, Wei

AU - Yang, E. S.

PY - 1985/1/1

Y1 - 1985/1/1

N2 - With the "orthogonal experimental design" (OED), the dependence of conductivity and transparency of tin oxide films and open circuit voltage Voc of SIS solar cells on the spray deposition process factors was studied. The OED technique was found to be a powerful method for realizing the best factor combination. Using OED, curves were obtained which clearly depict the effects of each factor on the SIS characteristics. The results of the experiments also illustrate exactly which variation in fabrication technique most affects the sheet resistance, Voc, and film transparency. Under the optimal combination of conditions, a thin film doped with NH4F was obtained, with about 90% transmission and a sheet resistance of about 80 Ω/□, along with an SIS structure with a Voc of about 0.61 V.

AB - With the "orthogonal experimental design" (OED), the dependence of conductivity and transparency of tin oxide films and open circuit voltage Voc of SIS solar cells on the spray deposition process factors was studied. The OED technique was found to be a powerful method for realizing the best factor combination. Using OED, curves were obtained which clearly depict the effects of each factor on the SIS characteristics. The results of the experiments also illustrate exactly which variation in fabrication technique most affects the sheet resistance, Voc, and film transparency. Under the optimal combination of conditions, a thin film doped with NH4F was obtained, with about 90% transmission and a sheet resistance of about 80 Ω/□, along with an SIS structure with a Voc of about 0.61 V.

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