Spontaneous formation of Al rich and Ga rich AlxGa 1-xAs/AlyGa1-yAs superlattice and strong enhancement of optical properties

Albert Chin*, K. Y. Hsieh, H. Y. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1-xAs/AlyGa1-yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 Å Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation.

Original languageEnglish
Pages (from-to)1921-1923
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number15
DOIs
StatePublished - 1 Dec 1994

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