Spontaneous formation of Al rich and Ga rich AlxGa 1-xAs/AlyGa1-yAs superlattice and strong enhancement of optical properties

Albert Chin; K. Y. Hsieh; H. Y. Lin

doi:10.1063/1.112817

Spontaneous formation of Al rich and Ga rich Al_xGa _1-xAs/Al_yGa_1-yAs superlattice and strong enhancement of optical properties

Albert Chin^*, K. Y. Hsieh, H. Y. Lin

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Long range composition ordering and spontaneous formation of Al rich and Ga rich Al_xGa_1-xAs/Al_yGa_1-yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 Å Al_0.4GaAs quantum well laser diode heterostructure with Al_0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al_0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation.

Original language	English
Pages (from-to)	1921-1923
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	15
DOIs	https://doi.org/10.1063/1.112817
State	Published - 1 Dec 1994

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@article{de7d7760160340c398d2788697c80d23,

title = "Spontaneous formation of Al rich and Ga rich AlxGa 1-xAs/AlyGa1-yAs superlattice and strong enhancement of optical properties",

abstract = "Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1-xAs/AlyGa1-yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 {\AA} Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation.",

author = "Albert Chin and Hsieh, {K. Y.} and Lin, {H. Y.}",

year = "1994",

month = dec,

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doi = "10.1063/1.112817",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Spontaneous formation of Al rich and Ga rich AlxGa 1-xAs/AlyGa1-yAs superlattice and strong enhancement of optical properties

AU - Chin, Albert

AU - Hsieh, K. Y.

AU - Lin, H. Y.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1-xAs/AlyGa1-yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 Å Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation.

AB - Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1-xAs/AlyGa1-yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 Å Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation.

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