Spin-resolved electron transport in nanoscale heterojunctions. Theory and applications

Artur Useinov*, Hsiu-Hau Lin, Niazbeck Useinov, Lenar Tagirov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The work represents the extended theoretical model of the electrical conductance in nanoscale magnetic pointlike contacts. The developed approach describes diffusive, quasi-ballistic, ballistic and quantum regimes of the spin-resolved conductance that is important for further development of the contact Andreev reflection spectroscopy, heterojunction models, scanning tunnel microscopy techniques. As a benefit, the model provides a unified description of the contact resistance from Maxwell diffusive through the ballistic to purely quantum transport regimes without residual terms. The model of the point contact assumes that the contact area can be replaced by a complicated object (i.e. the tunnel barrier or complicated one with nanoparticles, narrow domain wall, etc.), where the potential energy profile determines its electrical properties. The model can be easily adapted to particular contact materials, its physical properties and species of the contact area.

Original languageEnglish
Article number166729
Number of pages7
JournalJournal of Magnetism and Magnetic Materials
Volume508
DOIs
StatePublished - 15 Aug 2020

Keywords

  • Spintronics
  • Interconnects
  • Heterojunctions
  • Point contact
  • Ballistic magnetoresistance
  • Spin-resolved conductance
  • Spin-resolved contact resistance
  • Domain wall resistance
  • Tunnel magnetoresistance
  • POINT-CONTACT SPECTROSCOPY
  • MAGNETORESISTANCE
  • NANOCONTACTS
  • CONDUCTION
  • SHARVIN

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