Spin bottleneck in resonance tunneling through In 0.04Ga 0.96As/GaAs Vertical double quantum dots

S. M. Huang*, Y. Tokura, H. Akimoto, K. Kono, Juhn-Jong Lin, S. Tarucha, K. Ono

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We study the electron resonance tunneling through double quantum dots with different g factors. We found that the resonance tunneling current is suppressed even if one of the Zeeman sublevels is aligned. The level broadening effect partially releases the blockade. The current maximum peak appears when the interdot detune is half of Zeeman energy difference of two quantum dots.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages735-736
Number of pages2
DOIs
StatePublished - 1 Dec 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period25/07/1030/07/10

Keywords

  • quantum dot
  • single electron tunneling
  • spin transport

Fingerprint Dive into the research topics of 'Spin bottleneck in resonance tunneling through In <sub>0.04</sub>Ga <sub>0.96</sub>As/GaAs Vertical double quantum dots'. Together they form a unique fingerprint.

Cite this