Spin and charge tunneling transport in magnetic tunnel junctions with embedded nanoparticles

Artur Useinov, Chih Huang Lai, Niazbeck Kh Useinov, Lenar R. Tagirov

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

2 Scopus citations

Abstract

Various multilayer systems such as magnetic tunnel junctions and their modifications attract attention due to their promising applications: magnetic field sensors, magnetic memory, memristors, nano spin-valves, and resistance generators. The current progress in studying giant magnetoresistance, tunnel magnetoresistance, and spin-transfer torque (STT) can provide successful solutions of the problems related to energy consumption and thermal stability factor of magnetic random access memory (MRAM, STT MRAM). Moreover, spintronic devices have a unique advantage against semiconductor devices that they are nonvolatile. In addition, they are expected to be more scalable than semiconductor-based devices, because magnetic nano-domain is much more stable groundwork for the information storage in contrast to a charged micro-capacitor. It is well-known that the leakage current rapidly increases with a capacitor dimension reduced down to the nano-scale.

Original languageEnglish
Title of host publicationNovel Magnetic Nanostructures
Subtitle of host publicationUnique Properties and Applications
PublisherElsevier
Pages373-400
Number of pages28
ISBN (Electronic)9780128135945
ISBN (Print)9780128135952
DOIs
StatePublished - 1 Jan 2018

Keywords

  • Giant magnetoresistance
  • Magnetic tunnel junction
  • Nanoparticles
  • Spin-transfer torque
  • Tunnel magnetoresistance

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