Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®

H. L. Sun*, H. M. Jao, H. T. Huang, J. Y. Pan, Tuo-Hung Hou, S. Chen, S. Ramamurthy, E. Chiao, D. Wilusz, A. Chen

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

This paper characterizes the performance of the Applied Materials 200 mm Radiance™ Centura for 0.13 μm ultra-shallow junction (USJ) applications. The Radiance spike anneal process is distinguished by fast ramp-up (250°C/sec) and cool-down rates (90°C/sec). Spike annealing prevents transient enhanced diffusion (TED) and out-diffusion effects of the implant dopant and thus enables good control over USJ formation. The Radiance USJ technology for advanced 0.13 μm devices succeeded in achieving a junction sheet resistance <400 ohm/cm2 and depth <400Å on PMOS and <250Å on NMOS at 1E18/cm3 dopant concentration. The process performance with respect to device requirements and temperature control is presented.

Original languageEnglish
Pages246-249
Number of pages4
DOIs
StatePublished - Sep 2001
Event9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001 - Anchorage, United States
Duration: 25 Sep 200129 Sep 2001

Conference

Conference9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001
CountryUnited States
CityAnchorage
Period25/09/0129/09/01

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