In this work, a simple but accurate circuit model, which can be incorporated into circuit simulation programs such as SPICE, for field emission triode (FET) is developed. The model is based on the Fowler-Nordheim (F-N) J-E relationship but takes into account the charge distribution on the surface of the tip of the device. A procedure is also developed to extract the parameters of the model.
|Number of pages||5|
|State||Published - 1996|
|Event||Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia|
Duration: 7 Jul 1996 → 12 Jul 1996
|Conference||Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC|
|Period||7/07/96 → 12/07/96|