Spectroscopic signatures for interlayer coupling in MoS2-WSe2 van der waals stacking

Ming Hui Chiu, Ming Yang Li, Wengjing Zhang, Wei Ting Hsu, Wen-Hao Chang, Mauricio Terrones, Humberto Terrones, Lain Jong Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

204 Scopus citations

Abstract

Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 °C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A2 1g for WSe2 (309 cm-1) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E′ for MoS2 at 286 cm-1 and A2 1g for MoS2 at around 463 cm-1 confirm the enhancement of the interlayer coupling.

Original languageEnglish
Pages (from-to)9649-9656
Number of pages8
JournalACS Nano
Volume8
Issue number9
DOIs
StatePublished - 23 Sep 2014

Keywords

  • heterojunction
  • interlayer coupling
  • molybdenum disulfide
  • transition metal dichalcogenides
  • tungsten diselenides
  • van der Wall stacking

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