Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations

Hyeyoung Ahn*, C. H. Shen, C. L. Wu, S. Gwo

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

Spectroscopic ellipsometry (SE) has been performed to determine the optical properties of the InN epitaxial films grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. In addition to SE, cross-sectional transmission electron microscopy and x-ray diffraction reveal that epitaxially grown InN epilayer is homogeneous with high crystalline quality and does not include any metallic In. SE results analyzed by the Adachi's model for the dielectric function of InN show that the optical absorption edge of InN varies in the range of 0.76-0.83 eV depending on the carrier concentration, which is determined by the thickness of the AlN buffer layer.

Original languageEnglish
Article number201905
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number20
DOIs
StatePublished - 16 May 2005

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