Spectral shape and broadening of emission from AlGaInP light-emitting diodes

N. C. Chen, W. C. Lien, Y. K. Yang, C. Shen, Y. S. Wang, Jenn-Fang Chen

Research output: Contribution to journalArticle

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Abstract

This work presents a model for describing the shape of the spontaneous emission spectrum from a quantum-well structure. A function is introduced to specify the probability distribution for the effective band gap. Based on this model, the coexisting carrier thermal broadening and effective band gap broadening in the spontaneous emission spectrum can be separated from each other. Applying this model to the spectra of AlGaInP light-emitting diodes reveals that the probability distribution functions are almost Gaussian. Therefore, the emission spectra can be described by an analytical expression with fitted parameters. Possible reasons for this band gap broadening are discussed. The determination of the junction temperatures from the emission spectra and possible deviations of the results thus determined are also elaborated.

Original languageEnglish
Article number074514
JournalJournal of Applied Physics
Volume106
Issue number7
DOIs
StatePublished - 23 Oct 2009

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