Spatially-resolved photoluminescence studies of V-shaped pits on Al 0.16Ga 0.84N

H. Y. Huang*, C. S. Ku, W. C. Ke, N. E. Tang, J. M. Peng, Wei-Kuo Chen, W. H. Chen, M. C. Lee, H. Y. Lee

*Corresponding author for this work

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1 Scopus citations

Abstract

The V-shaped pit on Al-GaN by using the μ-PL and atomic force microscopy (AFM) was examined. The results showed that a specific defect-related band was introduced inside the V-pit region that gives rise to a dominant feature in μ-PL spectra. In addition, the V-pit-related levels were efficient relaxation channels for photoexcited carriers so that the new broader emission peak was enhanced significantly and the I nbe was suppressed.

Original languageEnglish
Pages (from-to)2172-2174
Number of pages3
JournalJournal of Applied Physics
Volume95
Issue number4
DOIs
StatePublished - 15 Feb 2004

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