Spatially and temporally resolving the degradation of n-channel poly-Si thin-film transistors under hot-carrier stressing

Ming Hsien Lee*, Kai Hsiang Chang, Horng-Chih Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A test structure was proposed to investigate the spatial and temporal evolution of hot-carrier degradation in n -channel poly-Si thin-film transistors. Our experimental results clearly show that the initial damage during the early stage of hot-carrier stressing, which is still undetectable by conventional test structures, can be easily observed by the structure. In addition, the proposed test structure is also capable of resolving the evolution of the degradation along the channel, thus providing a powerful tool to study the location-dependent damage mechanisms.

Original languageEnglish
Article number054518
JournalJournal of Applied Physics
Volume101
Issue number5
DOIs
StatePublished - 23 Mar 2007

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