Spatial Distributions of Thin Oxide Charging in Reactive Ion Etcher and MERIE Etcher

Hyungcheol Shin, Ko Noguchi, Xue Yu Qian, Neeta Jha, Graham Hills, Chen-Ming Hu

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

The spatial variation of the oxide charging across a wafer in a magnetically enhanced reactive ion etcher (MERIE) was investigated and compared with that in a reactive ion etcher (RIE). The polarity as well as the magnitude of the oxide charging current were determined by evaluating quasi-static CV curves for MOS capacitors. In a MERIE etcher with a static magnetic field, oxide charging is negative for about half of the wafer and positive for the other half of the wafer. A model is proposed to explain how lateral magnetic field affects the spatial distribution of charging across the wafer in a MERIE etcher.

Original languageEnglish
Pages (from-to)88-90
Number of pages3
JournalIEEE Electron Device Letters
Volume14
Issue number2
DOIs
StatePublished - 1 Jan 1993

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