Spatial correlation between efficiency and crystal structure in GaN-based light-emitting diodes prepared on high-aspect ratio patterned sapphire substrate with sputtered AlN nucleation layer

Li Chuan Chang, Yu An Chen, Cheng-Huang Kuo

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

In this paper, we investigate sputtered physical vapor deposition (PVD) AlN nucleation layer effects on crystal quality and efficiency of GaN-based light-emitting diodes (LEDs) prepared on high-aspect ratio patterned sapphire substrate (HARPSS). The crystal quality of the GaN epitaxial layer prepared on HARPSS with a PVD AlN nucleation layer was significantly better than that with a conventional metal organic chemical vapor deposition (MOCVD)-grown AlN nucleation layer. In addition, the pure wurzite structure GaN prepared on HARPSS could be obtained using PVD AlN nucleation layer. With the PVD AlN nucleation layer, the 20-mA LED light output power of the LEDs can be enhanced by 47.7% compared with the LEDs with the conventional MOCVD-grown AlN nucleation layer.

Original languageEnglish
Article number6832572
Pages (from-to)2443-2447
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume61
Issue number7
DOIs
StatePublished - 1 Jan 2014

Keywords

  • AlN
  • GaN
  • light-emitting diodes (LEDs)
  • nucleation
  • patterned sapphire substrate (PSS)
  • physical vapor deposition (PVD).

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