Spacer FinFET: Nanoscale double-gate CMOS technology for the terabit era

Yang Kyu Choi*, Tsu Jae King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

A spacer lithography technology using a sacrificial layer and a chemical vapor deposition (CVD) spacer layer has been developed, and is demonstrated to achieve sub-40 nm structures with conventional dry etching. The minimum-sized features are finished not by photolithography but by the CVD film thickness. Therefore the spacer lithography technology yields critical dimension variations of minimum-sized features which are much smaller than achieved by optical or e-beam lithography. It also provides a doubling of device density for a given lithography pitch. This spacer lithography technology is used to pattern silicon-fin structures for double-gate MOSFETs and CMOS FinFET results are reported.

Original languageEnglish
Pages (from-to)1595-1601
Number of pages7
JournalSolid-State Electronics
Volume46
Issue number10
DOIs
StatePublished - 1 Oct 2002

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