Space-charge-limited current conductions in La 2O 3 thin films deposited by E-beam evaporation after low temperature dry-nitrogen annealing

Yongshik Kim*, Shun Ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Lantham oxide (La 2O 3) was deposited by E-beam evaporation on n-Si(100), and annealed at 200°C in dry-nitrogen ex-situ for 5 min. From the applied voltage and temperature dependences of the current of the gate oxide, it has been shown that the main conduction mechanisms are SCLC (Space- Charge-Limited Current) and Schottky conductions at low and high applied voltages, respectively. Trap levels in the oxide band gap composed of both exponential and localized distributions was extracted by using of the differential method. The dielectric constant obtained from Schottky conduction was 27 and was consistent with the C-V result.

Original languageEnglish
Title of host publicationESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
EditorsR.P. Mertens, C.L. Claeys
Pages81-84
Number of pages4
StatePublished - 2004
EventESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium
Duration: 21 Sep 200423 Sep 2004

Publication series

NameESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Conference

ConferenceESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
CountryBelgium
CityLeuven
Period21/09/0423/09/04

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