Source/drain series resistance extraction in HKMG multifin bulk FinFET devices

Ping Hsun Su, Yi-ming Li

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Effective extraction of source/drain (S/D) series resistance is a challenging task owing to poor epi-growth and nonuniform distribution of current density in S/D, critical limitation of restrictive design rule, ultra thin contact film, and complicated 3-D fin-type field effect transistor (FinFET) structure. In this paper, we report a test structure for measurement of linear and nonlinear S/D series resistances. This technique enables us to evaluate each component of S/D series resistance resulting from the S/D contact, the S/D epi-growth fin, the S/D extension, and the channel gate, respectively. The S/D series resistance for fins on different layout location of the same diffusion is characterized and modeled by connection with a specified S/D contact on it. Furthermore, the S/D series resistance of each fin can be analytically calculated, respectively, by swapping the S/D bias condition. The proposed test structure and extraction technique provides a robust monitoring tool to diagnose a process weak point of the 16-nm multifin high-k/metal gate bulk FinFET devices.

Original languageEnglish
Article number7057668
Pages (from-to)193-199
Number of pages7
JournalIEEE Transactions on Semiconductor Manufacturing
Volume28
Issue number2
DOIs
StatePublished - 1 May 2015

Keywords

  • Bulk fin-type field effect transistor (FinFET)
  • channel fin doping
  • contact size
  • epi growth
  • explicit model
  • extraction
  • high-k/metal gate
  • measurement
  • multifins
  • series resistance
  • source/drain (S/D) resistance
  • test structure

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