Source-drain barrier height engineering for suppressing the a-Si:H TFTs photo leakage current

M. C. Wang, T. C. Chang*, Po-Tsun Liu, Y. Y. Li, F. S. Huang, Y. J. Mei, J. R. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

For effectively reducing the off-state signal loss resulted from the a-Si:H TFTs photo leakage current, the a-Si:H TFTs with the use of ITO as source-drain metal have been fabricated for this study. Several TFT structures have been fabricated to examine this characteristic. A remarkable reduction in photo leakage current has been observed under the 3300 cd/m2 CCFL backlight illumination. The source-drain barrier height engineering has been proposed for these results. According to the energy band diagram, the barrier height for hole is estimated about 3 eV. As a result, the photo-generation holes blocked in the source-drain barrier height could effectively reduce the photo leakage current in off-state.

Original languageEnglish
Pages (from-to)470-474
Number of pages5
JournalThin Solid Films
Volume516
Issue number2-4
DOIs
StatePublished - 3 Dec 2007

Keywords

  • Photo leakage current
  • TFT
  • a-Si:H

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