SONOS-type flash memory using an HfO2as a charge trapping layer deposited by the sol-gel spin-coating method

Hsin Chiang You; Tze Hsiang Hsu; Fu-Hsiang Ko; Jiang Wen Huang; Wen Luh Yang; Tan Fu Lei

doi:10.1109/LED.2006.879026

SONOS-type flash memory using an HfO₂as a charge trapping layer deposited by the sol-gel spin-coating method

Hsin Chiang You^*, Tze Hsiang Hsu, Fu-Hsiang Ko, Jiang Wen Huang, Wen Luh Yang, Tan Fu Lei

^*Corresponding author for this work

Institute of Nanotechnology

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

In this letter, the authors fabricate the silicon-oxide-nitride-oxide- silicon (SONOS)-like memory using an HfO₂as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900°C 1-min rapid thermal annealing. They examine the quality of sol-gel HfO₂ charge trapping layer by X-ray photoemission spectroscopy, Id-V g, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HfO₂ trapping layer. The sol-gel HfO₂ film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 10⁴ s with only 6% charge loss and long endurance program/erase cycles up to 10⁵.

Original language	English
Pages (from-to)	653-655
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	8
DOIs	https://doi.org/10.1109/LED.2006.879026
State	Published - 1 Aug 2006

Keywords

Charge retention
Endurance
HfO
Silicon-oxide-nitride-oxide-silicon (SONOS)-like memory
So-gel spin coating

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@article{f562605f05e74dfd9ba0e8a20df0b5a7,

title = "SONOS-type flash memory using an HfO2as a charge trapping layer deposited by the sol-gel spin-coating method",

abstract = "In this letter, the authors fabricate the silicon-oxide-nitride-oxide- silicon (SONOS)-like memory using an HfO2as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900°C 1-min rapid thermal annealing. They examine the quality of sol-gel HfO2 charge trapping layer by X-ray photoemission spectroscopy, Id-V g, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HfO2 trapping layer. The sol-gel HfO2 film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 104 s with only 6% charge loss and long endurance program/erase cycles up to 105.",

keywords = "Charge retention, Endurance, HfO, Silicon-oxide-nitride-oxide-silicon (SONOS)-like memory, So-gel spin coating",

author = "You, {Hsin Chiang} and Hsu, {Tze Hsiang} and Fu-Hsiang Ko and Huang, {Jiang Wen} and Yang, {Wen Luh} and Lei, {Tan Fu}",

year = "2006",

month = aug,

day = "1",

doi = "10.1109/LED.2006.879026",

language = "English",

volume = "27",

pages = "653--655",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - SONOS-type flash memory using an HfO2as a charge trapping layer deposited by the sol-gel spin-coating method

AU - You, Hsin Chiang

AU - Hsu, Tze Hsiang

AU - Ko, Fu-Hsiang

AU - Huang, Jiang Wen

AU - Yang, Wen Luh

AU - Lei, Tan Fu

PY - 2006/8/1

Y1 - 2006/8/1

N2 - In this letter, the authors fabricate the silicon-oxide-nitride-oxide- silicon (SONOS)-like memory using an HfO2as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900°C 1-min rapid thermal annealing. They examine the quality of sol-gel HfO2 charge trapping layer by X-ray photoemission spectroscopy, Id-V g, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HfO2 trapping layer. The sol-gel HfO2 film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 104 s with only 6% charge loss and long endurance program/erase cycles up to 105.

AB - In this letter, the authors fabricate the silicon-oxide-nitride-oxide- silicon (SONOS)-like memory using an HfO2as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900°C 1-min rapid thermal annealing. They examine the quality of sol-gel HfO2 charge trapping layer by X-ray photoemission spectroscopy, Id-V g, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HfO2 trapping layer. The sol-gel HfO2 film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 104 s with only 6% charge loss and long endurance program/erase cycles up to 105.

KW - Charge retention

KW - Endurance

KW - HfO

KW - Silicon-oxide-nitride-oxide-silicon (SONOS)-like memory

KW - So-gel spin coating

UR - http://www.scopus.com/inward/record.url?scp=33746550356&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.879026

DO - 10.1109/LED.2006.879026

M3 - Article

AN - SCOPUS:33746550356

VL - 27

SP - 653

EP - 655

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8