SONOS memories with embedded silicon nanocrystals in nitride by in-situ deposition method

Yi Hong Wu*, Tsung Yu Chiang, Sheng Hsien Liu, Wen Luh Yang, Tien-Sheng Chao, Fun Tat Chin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride by In-situ deposition method. The self-assembly silicon nanocrystals were in-situ deposited within the Si 3N4 storage layer by dissociation of dichlorosilane (SiH2Cl2) gas to a high density of 9 × 10 11 cm-2. This new structure exhibits larger memory windows for up to 6 V, better program/erase characteristics, and excellent data retention properties as compared to control device. In addition, this novel process is simple, low cost, and compatible to the standard complementary metal-oxide-semiconductor (CMOS) processes. This technology seems to be very promising for the advanced flash memory devices.

Original languageEnglish
Title of host publicationProceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
Pages195-198
Number of pages4
DOIs
StatePublished - 22 Sep 2008
EventIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble, France
Duration: 2 Jun 20084 Jun 2008

Publication series

NameProceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Conference

ConferenceIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
CountryFrance
CityMinatec Grenoble
Period2/06/084/06/08

Keywords

  • In-situ deposition
  • Silicon nanocrystal
  • SONOS memory

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