Solving the integration problem of one transistor one memristor architecture with a Bi-layer IGZO film through synchronous process

Che Chia Chang, Po-Tsun Liu*, Chen Yu Chien, Yang Shun Fan

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

This study demonstrates the integration of a thin film transistor (TFT) and resistive random-access memory (RRAM) to form a one-transistor-one-resistor (1T1R) configuration. With the concept of the current conducting direction in RRAM and TFT, a triple-layer stack design of Pt/InGaZnO/Al2O3 is proposed for both the switching layer of RRAM and the channel layer of TFT. This proposal decreases the complexity of fabrication and the numbers of photomasks required. Also, the robust endurance and stable retention characteristics are exhibited by the 1T1R architecture for promising applications in memory-embedded flat panel displays.

Original languageEnglish
Article number172101
JournalApplied Physics Letters
Volume112
Issue number17
DOIs
StatePublished - 23 Apr 2018

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