Solution-based silk fibroin dielectric in n-type C60 organic field-effect transistors: Mobility enhancement by the pentacene interlayer

Li Shiuan Tsai, Jenn Chang Hwang*, Chun Yi Lee, Yi Ting Lin, Cheng Lun Tsai, Ting Hao Chang, Yu Lun Chueh, Hsin-Fei Meng

*Corresponding author for this work

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

A pentacene interlayer of 2 nm thick is inserted between fullerene (C 60) and the solution-based silk fibroin dielectric in C60 organic field-effect transistors (OFETs). The pentacene interlayer assists to improve crystal quality of the C60 layer, leading to the increase of field-effect mobility (μFE) from 0.014 to 1 cm2 V -1 s-1 in vacuum. The μFE value of the C60 OFET is further enhanced to 10 cm2 V-1 s-1 when the OFET is exposed to air in a relative humidity of 55%. Generation of mobile and immobile charged ions in solution-based silk fibroin in air ambient is proposed.

Original languageEnglish
Article number233304
JournalApplied Physics Letters
Volume103
Issue number23
DOIs
StatePublished - 2 Dec 2013

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