Thermal dissipation paths in SOI MOSFETs were investigated. Thermal conductance was found to be independent of the gate length due to negligible dissipation via the gate path as compared to the source/drain path. Thermal conductance depended on the gate width and the results had good agreement with the equation. The effect of self-heating was taken into consideration to develop an SOI MOSFET compact model.
|Number of pages||2|
|State||Published - 1 Dec 2000|