SOI MOSFET thermal conductance and its geometry dependence

Hajime Nakayama*, Motoaki Nakamura, Hiroshi Komatsu, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

9 Scopus citations

Abstract

Thermal dissipation paths in SOI MOSFETs were investigated. Thermal conductance was found to be independent of the gate length due to negligible dissipation via the gate path as compared to the source/drain path. Thermal conductance depended on the gate width and the results had good agreement with the equation. The effect of self-heating was taken into consideration to develop an SOI MOSFET compact model.

Original languageEnglish
Pages128-129
Number of pages2
DOIs
StatePublished - 1 Dec 2000

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