SOI MOSFET on low cost SPIMOX substrate

S. Sundar*, Kumar Iyer, Xiang Lu, Nathan W. Cheung, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

Separation by plasma implantation of oxygen (SPIMOX) is a low-cost, high-throughput process for fabricating Silicon on Insulator (SOI) substrates. MOSFETs are fabricated on SPIMOX substrates and their characteristics are reported for the first time. The transistor characteristics and effective electron mobility of the silicon layer are compared to that in commercial Separation by implantation of oxygen (SIMOX) wafers. The effect of the back gate on the channel, which is unique to SOI, is observed. The gate oxides and surface roughness of SPIMOX wafers are also studied.

Original languageEnglish
Pages (from-to)1001-1004
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 6 Dec 19989 Dec 1998

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