Separation by plasma implantation of oxygen (SPIMOX) is a low-cost, high-throughput process for fabricating Silicon on Insulator (SOI) substrates. MOSFETs are fabricated on SPIMOX substrates and their characteristics are reported for the first time. The transistor characteristics and effective electron mobility of the silicon layer are compared to that in commercial Separation by implantation of oxygen (SIMOX) wafers. The effect of the back gate on the channel, which is unique to SOI, is observed. The gate oxides and surface roughness of SPIMOX wafers are also studied.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1998|
|Event||Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 6 Dec 1998 → 9 Dec 1998