Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures

Youhei Miyata*, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

20 distribution of depth profiling of impurities and their activity/non-activity are very important for development of process technology for nano-scale 3D devices. Si Fin structures doped withBoron (B) were evaluated by soft X-ray photoelectron spectroscopy (SXPES) and a feasibility of detecting the difference were demonstrated between the chemical bonding states as weII as concentrations ofB on top of Fins and those on sidewall of Fins.

Original languageEnglish
Title of host publicationIWJT 2012 - 2012 12th International Workshop on Junction Technology
EditorsYu-Long Jiang, Xin-Ping Qu, Guo-Ping Ru, Bing-Zong Li
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781467312578
DOIs
StatePublished - 2012
Event12th International Workshop on Junction Technology, IWJT 2012 - Shanghai, China
Duration: 14 May 201215 May 2012

Publication series

NameIWJT 2012 - 2012 12th International Workshop on Junction Technology
Volume2012-January

Conference

Conference12th International Workshop on Junction Technology, IWJT 2012
CountryChina
CityShanghai
Period14/05/1215/05/12

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