Soft X-ray photoelectron spectroscopy study of activation and deactivation of impurities in shallow junctions

Kazuo Tsutsui*, Masaoki Tanaka, Norifumi Hoshino, Hiroshi Nohira, Kuniyuki Kakushima, Parhat Ahmet, Yuichiro Sasaki, Bunji Mizuno, Takayuki Muro, Toyohiko Kinoshita, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Chemical bonding states of doped impurities, boron (B) and arsenic (As), in silicon (Si) shallow junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation of the impurities, and to clarify depth profiles of concentration of activated and deactivated impurities in shallow junctions. The study of B doped layer revealed that one chemical bonding state having the lowest biding energy is assigned to activated B and the other two states are correlated with deactivated B, which probably form B clusters. On the other hand, two different chemical bonding states were detected for As. It was found that the state having higher binding energy was correlated with activated As, while another state was probably correlated with deactivated As cluster.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages863-866
Number of pages4
DOIs
StatePublished - 2010
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 1 Nov 20104 Nov 2010

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period1/11/104/11/10

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    Tsutsui, K., Tanaka, M., Hoshino, N., Nohira, H., Kakushima, K., Ahmet, P., Sasaki, Y., Mizuno, B., Muro, T., Kinoshita, T., Hattori, T., & Iwai, H. (2010). Soft X-ray photoelectron spectroscopy study of activation and deactivation of impurities in shallow junctions. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 863-866). [5667454] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667454